MIT News July 26, 2024 Ferroelectric materials change polarization in response to an electric field and are useful for memory. However, these materials often suffer from fatigue as they are cycled many times, capping their lifetime. An international team of researchers (USA – MIT, Harvard, Japan) investigated the performance of a ferroelectric field-effect transistor (FeFET) based on sliding ferroelectricity in bilayer boron nitride at room temperature. Sliding ferroelectricity represents a different form of atomically thin 2D ferroelectrics, characterized by the switching of out-of-plane polarization through interlayer sliding motion. They examined the FeFET device employing monolayer graphene as the channel layer, […]
Tag Archives: Non-volatile memory
Scientists develop fatigue-free ferroelectric material
Phys.org June 6, 2024 Ferroelectric materials have switchable electrical polarization that is useful for high density non-volatile memories. However, fatigue hinders practical applications of these materials. An international team of researchers (Canada, China) reported a fatigue-free ferroelectric system based on the sliding ferroelectricity of bilayer 3R-MoS2. The memory performance of the ferroelectric device did not show the “wake-up effect” at low cycles or a substantial “fatigue effect” after 106 switching cycles under different pulse widths. The total stress time of device under an electric field was up to 105 s. According to the researchers their theoretical calculation shows that the […]