Phys.org  June 7, 2022 An international team of researchers (China, USA – SUNY Buffalo) studied and demonstrated the implementation of neutron-transmutation doping (NTD) to manipulate electron transfer. NTD is a controllable in-situ substitutional doping method that utilizes the nuclear reactions of thermal neutrons with the nuclei of the atoms in semiconductors. It provides a new way to dope 2D materials intentionally without extra reagents and it can be introduced into any step during the fabrication of 2D-materials-based devices, or even used post-fabrication. They successfully narrowed the bandgap and increased the electron mobility of SN-doped layered InSe, reflecting a significant improvement. […]