Phys.org  November 18, 2019 By using specially treated silicon surfaces to tailor the crystals’ size and shape, an international team of researchers (USA – Johns Hopkins University, University of Pennsylvania, Naval Research Laboratory, South Korea) has found a potentially faster and less expensive way to produce next-generation semiconductor crystals for microchips. They doused silicon substrates with phosphine gas and grew crystals on it. They discovered that the reaction of phosphine with the silicon support caused the crystals to grow as horizontal “ribbons” as opposed to the planar and triangularly shaped sheets. The research could enable new scientific discoveries and accelerate […]