Phys.org  January 20, 2021 In the quest for energy efficient and fast memory elements, optically controlled ferroelectric memories are promising candidates. By taking advantage of the imprint electric field existing in the nanometric BaTiO3 films and their photovoltaic response at visible light, researchers in Spain have shown that the polarization of suitably written domains can be reversed under illumination. They used this effect to trigger and measure the associate change of resistance in tunnel devices. They showed that engineering the device structure by inserting an auxiliary dielectric layer, the electroresistance increases by a factor near 2 × 103%, and a robust electric […]