Nanowerk  November 7, 2023 Ramp-reversal memory has recently been discovered in several insulator-to-metal transition materials where a non-volatile resistance change can be set by repeatedly driving the material partway through the transition. An international team of researchers (USA – Purdue University, University of Colorado, UCSD, France) has successfully developed a single-photon light source consisting of doped ytterbium ions (Yb3+) in an amorphous silica optical fiber at room temperature. They used optical microscopy to track the location and internal structure of accumulated memory as a thin film of VO2 was temperature cycled through multiple training subloops. The measurements revealed that the […]