Aluminum scandium nitride films: Enabling next-gen ferroelectric memory devices

Phys.org  July 19, 2024 By subjecting the films to post-heat-treatment at various temperatures up to 600 °C in both H2 and Ar gases Researchers in Japan investigated the changes in the crystal structure and ferroelectric properties of aluminum scandium nitride films sandwiched between platinum and titanium nitride and titanium nitride electrodes. The remanent polarization underwent slight change, whereas the coercive field was strengthened by approximately 9% because of the post-heat-treatment up to 600 °C irrespective of the atmosphere and electrode material. This change was much smaller than that reported for ferroelectric zirconium dioxide films as well as for lead zirconate titanate and […]