Phys.org   September 2, 2022 An international team of researchers (Germany, UK) has presented a detailed theory of the in-plane photoelectric (IPPE) effect providing analytical results for the THz wave generated photocurrent, the quantum efficiency, and the internal responsivity of the detector, the gate voltages, and the geometrical parameters of the detector. The calculations are performed for macroscopically wide samples at zero temperature. Results of the theory are applicable to any semiconductor systems with 2D electron gases, including III-V structures, silicon-based field effect transistors, and the novel 2D layered, graphene-related materials. Their findings make it possible to construct small, inexpensive, and […]