Phys.org  October 22, 2024 Single-crystal hexagonal boron nitride (hBN) is used extensively in many two-dimensional electronic and quantum devices, where defects significantly impact performance. An international team of researchers (Norway, Germany) examined the capture and emission dynamics of defects in hBN by utilizing low-frequency noise (LFN) spectroscopy in hBN-encapsulated and graphene-contacted MoS2 field-effect transistors (FETs). The low disorder of this heterostructure allowed the detection of random telegraph signals (RTS) in large device dimensions of 100 μm2 at cryogenic temperatures. Analysis of gate bias- and temperature-dependent LFN data indicated that RTS originated from a single trap species within hBN. Through calculations […]