Phys.org  December 5, 2022 Important physical limitations have prevented applying laser micro-welding to silicon (Si) and other technology-essential semiconductors. High intensities are required for internal glass modification. However, they result in strong propagation nonlinearities which defocus and delocalize intense infrared radiation. To overcome this, researchers in France created defects inside silicon that later serve as weak points to produce clean-edge cuts. The defects acted as strong bonding points. After setting up the right conditions to circumvent the effects, they successfully made the first experimental demonstration of silicon-silicon laser welding. After an optimization process, they extended the technique to gallium arsenide […]