Phys.org  October 2, 2024 A team of researchers in the US (Argonne National Laboratory, University of Chicago) has developed a predictive and general approach to investigate near-field energy transfer processes between localized defects in semiconductors, which couples first-principles electronic structure calculations and a nonrelativistic quantum electrodynamics description of photons in the weak-coupling regime which could be applied to investigate broad classes of defects in solids. They applied their approach to investigate a point defect in an oxide, the F center in MgO, and showed that the energy transfer from a magnetic source to the vacancy could lead to spin nonconserving […]