Nanowerk   July 25, 2018 An international team of researchers (Switzerland, Japan) made excitonic devices made of MoS2–WSe2 van der Waals heterostructures encapsulated in hexagonal boron nitride that demonstrate electrically controlled transistor actions at room temperature. The long-lived nature of the interlayer excitons in the devices results in them diffusing over five micrometres. Within the device, they have demonstrated the ability to manipulate exciton dynamics by creating electrically reconfigurable confining and repulsive potentials for the exciton flux. The research shows that it will be possible to integrate optical transmission and electronic data-processing systems into the same device, which will reduce the […]