Nanowerk  July 9, 2021 A team of researchers in the US (UCLA, UC Irvine) explored the interface energy transport in semiconductor materials with high thermal conductivity, including boron arsenide (BAs) and boron phosphide (BP). They showed that BAs and BP cooling substrates can be heterogeneously integrated with metals, a wide-bandgap semiconductor (gallium nitride, GaN) and high-electron-mobility transistor devices. GaN-on-BAs structures exhibit a high thermal boundary conductance of 250 MW m−2 K−1, and comparison of device-level hot-spot temperatures with length-dependent scaling (from 100 μm to 100 nm) shows that the power cooling performance of BAs exceeds that of reported diamond devices. Operating AlGaN/GaN high-electron-mobility transistors with […]