MIT News August 12, 2024 For topological Weyl semimetals, there is a pressing need to fine-tune the Fermi level, a critical aspect of quantum materials, to the Weyl nodes and unlock exotic electronic and optoelectronic effects associated with the divergent Berry curvature. However, the situation for bulk crystals poses significant challenges. A team of researchers in the US (MIT, Brookhaven National Laboratory, industry) demonstrated the meV level ultra-fine-tuning of the Fermi level of bulk topological Weyl semimetal tantalum phosphide. By calculating the desired carrier density and controlling the accelerator profiles, the Fermi level could be experimentally fine-tuned from 5 meV below, […]
Tag Archives: Doping
Clean doping strategy produces more responsive phototransistors
Phys.org June 7, 2022 An international team of researchers (China, USA – SUNY Buffalo) studied and demonstrated the implementation of neutron-transmutation doping (NTD) to manipulate electron transfer. NTD is a controllable in-situ substitutional doping method that utilizes the nuclear reactions of thermal neutrons with the nuclei of the atoms in semiconductors. It provides a new way to dope 2D materials intentionally without extra reagents and it can be introduced into any step during the fabrication of 2D-materials-based devices, or even used post-fabrication. They successfully narrowed the bandgap and increased the electron mobility of SN-doped layered InSe, reflecting a significant improvement. […]