Phys.org  May 30, 2024 Previous investigations for thickness-scalable high dielectric constant (k) gate layers have failed to solve the “polarizability–scalability–insulation robustness issues. An international team of researchers (UK, China) showed that this problem could be solved by using a gate layer of a high k ferroelectric oxide in its superparaelectric (SPE) state. They showed that in the SPE, the polar order became local and was dispersed in an amorphous matrix with a crystalline size down to a few nanometers, leading to an excellent dimensional scalability and a good field-stability of the k value. As an example, a stable high k […]