Science Daily  October 11, 2022 To save energy in computing by co-locating computation and memory elements in an integrated circuit manufacturing, a team of researchers in the US (University of Virginia, Washington State University, North Carolina State University, Sandia National Laboratory, Pennsylvania State University, Brown University, Oak Ridge National Laboratory) explained how to engineer and enhance the stability of ferroelectric hafnium oxides, which are compatible with mainstream semiconductors. They showed that the presence of the top electrode during thermal processing results in larger tensile biaxial stress magnitudes and concomitant increases in ferroelectric phase fraction and polarization response, whereas film chemistry, […]