‘Surprising’ hidden activity of semiconductor material spotted by researchers

Science Daily  April 11, 2024 Studies of electric field-driven insulator-to-metal (IMT) in the prototypical vanadium dioxide (VO2) thin-film channel devices are largely focused on the electrical and elastic responses of the films, but the response of the corresponding Titanium dioxide (TiO2) substrate is often overlooked. An international team of researchers (USA – Pennsylvania State University, Cornell University, Argonne National Laboratory, Germany) found that in-operando spatiotemporal imaging of the coupled elastodynamics using X-ray diffraction microscopy of a VO2 film channel device on TiO2 substrate the film channel bulged during the IMT instead shrinking as expected. A micron thick proximal layer in […]