EurekAlert  August 24, 2020 An international team of researchers (Germany, France, Japan, Czech Republic) has shown that information storage in antiferromagnetic materials is fundamentally possible, and how efficiently information can be written electrically in insulating antiferromagnetic materials. For their measurements, the researchers used the antiferromagnetic insulator Cobalt oxide CoO – a model material that paves the way for applications. The result: Currents are much more efficient than magnetic fields to manipulate antiferromagnetic materials. This discovery opens the way toward applications ranging from smart cards that cannot be erased by external magnetic fields to ultrafast computers – thanks to the superior […]