Phys.org December 17, 2024 Two-dimensional semiconductors have relied on metal-work-function engineering which has led to the development of effective n-type 2D FETs, but it is challenging with p-type FETs. An international team of researchers (USA – Pennsylvania State University, Czech Republic, India) showed that the degenerate p-type doping of molybdenum diselenide and tungsten diselenide could reduce the contact resistance in multilayers. But this resulted in poor electrostatic control, and they found that the doping effectiveness was reduced in thinner layers due to strong quantum confinement effects. To overcome this, they developed a high-performance p-type 2D molybdenum diselenide FET using a […]
Tag Archives: 2D semiconductors
Solving quantum mysteries: New insights into 2D semiconductor physics
Nanowerk October 16, 2023 An international team of researchers (Australia, Spain) has introduced a novel approach ‘quantum virial expansion,’ to uncover the complex quantum interactions in two-dimensional semiconductors. They showed that this constituted a perturbatively exact theory in the high-temperature or low-doping regime, where the electrons’ thermal wavelength was smaller than their interparticle spacing. They obtained exact analytic expressions for the photoluminescence and predicted new features such as a nontrivial shape of the attractive branch peak related to universal resonant exciton-electron scattering and an associated energy shift from the trion energy. The theory allowed them to formally unify the two […]