Phys.org August 18, 2023 Metal contacts to MoS2 field-effect transistors play a determinant role in the device electrical characteristics and need to be chosen carefully. However, they suffer from high contact resistance because of the Schottky barrier and the Fermi level pinning effects that occur at the contact/MoS2 interface. To overcome this issue an international team of researchers (the Netherlands, India) investigated 2D metallic TiSx (x ∼ 1.8) as top contacts for MoS2 FETs using atomic layer deposition for the synthesis of both the MoS2 channels as well as the TiSx contacts and assessed the electrical performance of the fabricated […]
Tag Archives: 2D metals
Two-dimensional metals open pathways to new science
Nanowerk March 9, 2020 To make 2D metals key ingredients in next-generation quantum and optoelectronic devices they must be stabilized against environmental degradation and integrated into heterostructure devices at the wafer scale. A team of researchers in the US (Pennsylvania State University, Lawrence Berkeley National Laboratory, Oak Ridge National Laboratory) has demonstrated large-area, environmentally stable, single-crystal 2D gallium, indium and tin that are stabilized at the interface of epitaxial graphene and silicon carbide. The 2D metals are covalently bonded to SiC below but present a non-bonded interface to the graphene overlayer; that is, they are ‘half van der Waals’ metals […]