Straining a material’s atomic arrangement may make for cleaner, smarter devices

Phys.org  December 5, 2024
Strong coupling between polarization (P) and strain (É›) in ferroelectric complex oxides offers unique opportunities to dramatically tune their properties. An international team of researchers (USA – Pennsylvania State University, Cornell University, Stanford University, University of Nebraska, Argonne National Laboratory, Belgium, Germany) demonstrated strain tuning of ferroelectricity in epitaxial potassium niobate (KNbO3) thin films grown by sub-oxide molecular beam epitaxy. While bulk KNbO3 exhibited three ferroelectric transitions and a Curie temperature (Tc) of ≈676 K, phase-field modeling predicted that a biaxial strain pushes its Tc > 975 K, its decomposition temperature in air, and for −1.4% strain, to Tc > 1325 K, its melting point. Ferroelectric measurements, and transmission electron microscopy revealed a single tetragonal phase from 10 K to 975 K, an enhancement in the tetragonal phase remanent polarization, and a ≈200% enhancement in its optical second harmonic generation coefficients over bulk values. According to the researchers these properties in a lead-free system make it an attractive candidate for applications ranging from high-temperature ferroelectric memory to cryogenic temperature quantum computing… read more. Open Access TECHNICAL ARTICLE 

a) Schematic of second harmonic  generation (SHG) set up in reflection… Credit: Advanced Materials, 12 November 2024

Posted in Quantum computing and tagged , , .

Leave a Reply