Phys.org December 17, 2024
Two-dimensional semiconductors have relied on metal-work-function engineering which has led to the development of effective n-type 2D FETs, but it is challenging with p-type FETs. An international team of researchers (USA – Pennsylvania State University, Czech Republic, India) showed that the degenerate p-type doping of molybdenum diselenide and tungsten diselenide could reduce the contact resistance in multilayers. But this resulted in poor electrostatic control, and they found that the doping effectiveness was reduced in thinner layers due to strong quantum confinement effects. To overcome this, they developed a high-performance p-type 2D molybdenum diselenide FET using a layer-by-layer thinning method to create a device with thin layers at the channel and thick doped layers at the contact regions… read more. TECHNICAL ARTICLEÂ
Substitutionally doped p-type MoSe2 FETs. Credit: Nature Electronics, 06 November 2024