Phys.org July 5, 2024
Nernst effect has potential for energy conversion achieving high performance and versatility at low temperatures. However, achieving high performance and versatility at low temperatures remains elusive. An international team of researchers (Switzerland, Japan) demonstrated a large and electrically tunable Nernst effect by combining the electrical properties of graphene with the semiconducting characteristics of indium selenide in a field-effect geometry. Photovoltage measurements revealed a stronger photo-Nernst signal in the graphene/indium selenide heterostructure compared with individual components. They observed a record-high Nernst coefficient at ultralow temperatures and low magnetic fields, an important step towards applications in quantum information and low-temperature emergent phenomena. According to the researchers their results established a new platform for exploring and manipulating this thermoelectric effect… read more. Open Access TECHNICAL ARTICLE
Device schematics and basic characterization. Credit: Nature Nanotechnology, 02 July 2024