Phys.org June 6, 2024
Ferroelectric materials have switchable electrical polarization that is useful for high density non-volatile memories. However, fatigue hinders practical applications of these materials. An international team of researchers (Canada, China) reported a fatigue-free ferroelectric system based on the sliding ferroelectricity of bilayer 3R-MoS2. The memory performance of the ferroelectric device did not show the “wake-up effect” at low cycles or a substantial “fatigue effect” after 106 switching cycles under different pulse widths. The total stress time of device under an electric field was up to 105 s. According to the researchers their theoretical calculation shows that the fatigue-free feature of sliding ferroelectricity was due to the immobile charge defects in sliding ferroelectricity. Fatigue-free ferroelectric switching could dramatically improve the endurance of devices. … read more. TECHNICAL ARTICLE
The sliding ferroelectricity endows ferroelectric materials with fatigue-free features. Credit: NIMTE