Nanowerk May 30, 2022
To overcome the limitations of processing costs, power consumption and integration of miniaturizing silicon-based logic devices, studies are being conducted on electronic and logic devices based on very thin two-dimensional semiconductors at an atomic layer level. An international team of researchers (South Korea, Japan) were able to selectively control the electrical properties of semiconductor electronic devices using Cl-doped tin diselenide (Cl-SnSe2). They were able to freely control the characteristics of the N-type and P-type devices by minimizing defects with the semiconductor interface. In other words, a single device could perform the functions of both N-type and P-type devices. They successfully implemented a high-performance, low-power, complementary logic circuit that could perform different logic operations such as NOR and NAND. According to the researchers their work will contribute to accelerating the commercialization of next-generation system technologies such as artificial intelligence systems and the next-generation flexible and transparent semiconductor devices…read more. Open Access TECHNICAL ARTICLEÂ
Electrical properties of chlorine-doped SnSe2 (Cl–SnSe2)… Credit: Advanced Materials, 20 March 2022Â