Nanowerk  December 6, 2021
For ultrafast non-conventional computing synchronization of large spin Hall nano-oscillator arrays tuning its individual oscillators and providing built-in memory units remain substantial challenges. An international team of researchers (Sweden, India, Japan) has demonstrated the integration of a memristor into another, a spintronic oscillator. Arrays of the memristor-controlled oscillators combine the non-volatile local storage of the memristor function with the microwave frequency computation of the nano-oscillator networks and can closely imitate the non-linear oscillatory neural networks of the human brain. Using the memristor-controlled spintronic oscillator arrays, they could tune the synaptic interactions between adjacent neurons and program them into mutually different and partially synchronized states. In a test device the resistance of the memristor changed with the voltage hysteresis applied to the top Ti/Cu electrode. Upon voltage application to the electrode, an electric field was applied at the high-resistance state, compared to electric current flows for the low-resistance state. The effects of electric field and current on the oscillator differed from each other, offering various controls of oscillation and synchronization properties…read more. TECHNICAL ARTICLEÂ
Device schematic and multi-level resistive switching of the memristor gate. Credit: Nature Materials (2021)Â