Phys.org August 25, 2021
The quality of photonic integrated circuits are limited due to the high density of crystal defects near growth interface. Researchers in China have fabricated an ultralow loss 4H-SiCOI platform with a record-high-Q factor of 7.1 × 106. The platform was prepared by wafer-bonding than thinning techniques, enabled the same crystalline quality as bulk high-pure 4H-SiC crystal. The high Q resonators were used to demonstrate various nonlinear processes including generation of multiple harmonics up to the fourth order. Broadband frequency conversions, including second-, third-, fourth- harmonic generation have been observed. Using a dispersion-engineered SiC microresonator, Kerr frequency combs covering from 1300 to 1700 nm have been achieved at a low input power of 13 mW. The work contributes to the development of photonic devices that harness the unique optical properties of SiC…read more. Open Access TECHNICAL ARTICLEÂ
