MIT News February 26, 2021
The atomic structure at the interface between 2D and 3D materials influences properties such as contact resistance, photo-response, and high-frequency electrical performance. An international team of researchers (USA – MIT, Harvard University, Canada) used epitaxially aligned MoS2/Au as a model system to demonstrate the use of advanced scanning transmission electron microscopy combined with a geometric convolution technique in imaging the crystallographic moiré pattern at the 2D/3D interface. This moiré period is often hidden in conventional electron microscopy, where the Au structure is seen in projection. They showed that charge density is modulated according to the moiré period, illustrating the potential for (opto-)electronic moiré engineering at the 2D/3D interface. Their work presents a general pathway to directly image periodic modulation at interfaces using this combination of emerging microscopy techniques and in the field of quantum physics and catalysis…read more. Open Access TECHNICAL ARTICLEÂ
HRTEM and STEM demonstrating epitaxial MoS2/Au{111} moiré. Credit: Nature Communications volume 12, Article number: 1290 (2021)