Novel MOF is potential next-gen semiconductor

Phys.org  March 23, 2020
Researchers at Clemson University constructed a novel double-helical MOF (dhMOF) by introducing a new butterfly-shaped electron-rich Ï€-extended tetrathiafulvalene ligand equipped with four benzoate groups (ExTTFTB). To create a charge transport pathway capable of conducting electricity, they diffused iodine vapor into the porous MOF, causing one strand to become electron deficient while the other remained electron rich. Electrical conductivity surged from 10–8 S/m up to 10–4 S/m range after iodine treatment. Thus, the introduction of the electron-rich ExTTFTB ligand afforded a novel double-helical MOF architecture featuring ovoid cavities and unique charge-delocalization pathways and delivered a new tool and design strategy for future development of electrically conducting stimuli-responsive MOFs…read more. TECHNICAL ARTICLE 

Sourav Saha’s metal-organic framework research was featured on the cover of ACS Applied Materials & Interfaces on March 18, 2020. Credit: Courtesy Sourav Saha

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