Science Daily November 25, 2019
Researchers in Germany have demonstrated a new type of programmable organic capacitive memory called p‐i‐n‐metal‐oxide‐semiconductor (pinMOS) memory with the possibility to store multiple states. It can be written as well as read electrically and optically. The device shows excellent repeatability, an endurance of more than 104 write‐read‐erase‐read cycles, and currently already over 24 hours retention time. The working mechanism of the pinMOS memory under dynamic and steady‐state operations is investigated to identify further optimization steps. The results reveal that the pinMOS memory principle is promising as a reliable capacitive memory device for future applications in electronic and photonic circuits like in neuromorphic computing or visual memory systems…read more. Open Access TECHNICAL ARTICLE
Schematic cross‐section of architecture for the pinMOS memory. Credit: Advanced Functional materials, 07 November 2019