Phys.org January 10, 2018
Recently unidirectional spin Hall magnetoresistance was reported in a conventional metal bilayer material system. A team of researchers in the US (University of Minnesota, Pennsylvania State University) demonstrated the existence of such magnetoresistance in the topological insulator-ferromagnet bilayers and showed that the adoption of topological insulators, compared to heavy metals, doubles the magnetoresistance performance at 150 Kelvin (-123.15 Celsius). The research could improve the future of low-power computing and memory for the semiconductor industry, including brain-like computing and chips for robots and 3D magnetic memory…read more. Open Access TECHNICAL ARTICLE
The schematic figure illustrates the concept and behavior of magnetoresistance. Credit: University of Minnesota