MIT News November 4, 2024
A range of novel transistor concepts have been explored for the development of data-centric computing for energy-efficient electronics that can overcome the fundamental limitations of conventional silicon transistors. However, an approach that can simultaneously offer high drive current and steep slope switching while delivering the necessary scaling in footprint is still lacking. An international team of researchers (USA – MIT, France, Italy) developed scaled vertical-nanowire heterojunction tunnelling transistors that were based on the broken-band GaSb/InAs system. The approach relies on extreme quantum confinement at the tunnelling junction and was based on an interface-pinned energy band alignment at the tunnelling heterojunction under strong quantization… read more. TECHNICAL ARTICLE
Electrical characteristics and benchmarking of vertical-nanowire Esaki diodes. Credit: Nature Electronics, 04 November 2024Â