Nanowerk November 26, 2024
Quantum devices such as spin qubits have been extensively investigated in electrostatically confined quantum dots using high-quality semiconductor heterostructures like GaAs and Si. Researchers in Japan demonstrated electrostatically forming the quantum dots in ZnO heterostructures. They uncovered the distinctive signature of the Kondo effect independent of the even-odd electron number parity, which contrasts with the typical behavior of the Kondo effect in GaAs. By analyzing temperature and magnetic field dependences, they found that the absence of the even-odd parity in the Kondo effect was not straightforwardly interpreted by the considerations developed for conventional semiconductors. Based on the unique parameters of ZnO, electron correlation likely plays a fundamental role in this observation. According to the researchers their study clarifies the physics of correlated electrons in the quantum dot and holds promise for applications in quantum devices, leveraging the unique features of ZnO…. read more. Open Access TECHNICAL ARTICLE
ZnO and device structure. Credit: Nature Communications volume 15, Article number: 9556, 07 November 2024