Phys.org September 23, 2024
The phonon Boltzmann transport equation (BTE) is commonly used for qualitatively studying the non-Fourier thermal transport phenomena of toy problems. Researchers at the University of Michigan demonstrated an efficient and parameter-free computational method of the phonon BTE to achieve quantitatively accurate thermal simulation for realistic materials and devices. Their method did not rely on empirical material properties input. It could be generally applicable for different materials and the predicted results could match well with experimental results. According to the researchers full-scale thermal simulation of a 3-dimensional fin field-effect transistor with 13 million degrees of freedom, could be completed within two hours on a personal computer. The method makes it possible to achieve the predictive design of realistic nanostructures for the desired thermal conductivity and enables accurately resolving the temperature profiles at the transistor level… read more. TECHNICAL ARTICLE
Graphical abstract. Credit: Fundamental Research, Volume 4, Issue 4, July 2024, Pages 907-915